Silicon-monolithic Integratedmillimeterwave Circuits for Vehicular Technology

نویسندگان

  • P. Russer
  • R. Lachner
چکیده

Within the next decade intelligent millimeterwave radar systems for vehicular sensor applications in the frequency band from 77 GHz to 81 GHz will be developed in Germany. State of the art in passive and active components of monolithic integrated silicon millimeterwave systems is discussed and the data of already realized components are presented.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Si and SiGe Millimeter-Wave Integrated Circuits

Monolithic integrated millimeter-wave circuits based on silicon and SiGe are emerging as an attractive option in the field of millimeter-wave communications and millimeterwave sensorics. The combination of active devices with passive planar structures, including also antenna elements, allows single-chip realizations of complete millimeter-wave front-ends. This paper reviews the state-of-the-art...

متن کامل

VIPower: HIGH SIDE DRIVERS FOR AUTOMOTIVE

Today’s automotive market requires a continuous increasing of complexity and reliability in the electronic systems. To achieve this, the concept of the automotive systems is more and more based on micro controllers architecture driving integrated monolithic circuits that include a power stage, control, driving and protection circuits on the same chip. Vertical Intelligent Power, a STMicroelectr...

متن کامل

Silicon Photonics Platform for Government Applications

We review Sandia’s silicon photonics platform for government applications. Silicon photonics offers the potential for extensive size, weight, power, and cost (SWaP-c) reductions compared to existing III-V or purely electronics circuits. The Sandia fabrication facility is certified as a trusted foundry and can therefore produce devices and circuits intended for military applications. We will des...

متن کامل

Monolithic integration of erbium-doped amplifiers with silicon-on-insulator waveguides.

Monolithic integration of Al2O3:Er3+ amplifier technology with passive silicon-on-insulator waveguides is demonstrated. A signal enhancement of >7 dB at 1533 nm wavelength is obtained. The straightforward wafer-scale fabrication process, which includes reactive co-sputtering and subsequent reactive ion etching, allows for parallel integration of multiple amplifier and laser sections with silico...

متن کامل

SiGe HMOSFET monolithic inverting current mirror

1 SiGe HMOSFET monolithic inverting current mirror K. Michelakis *, S. Despotopoulos, C. Papavassiliou, A. Vilches, K. Fobelets, C. Toumazou a Institute of Biomedical Engineering Imperial College London South Kensington Campus, London SW7 2AZ United Kingdom Circuits and Systems Department of Electrical and Electronic Engineering Imperial College London South Kensington Campus, London SW7 2AZ Un...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2005